All MOSFET. FQU30N06LTU Datasheet

 

FQU30N06LTU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQU30N06LTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: I-PAK

 FQU30N06LTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU30N06LTU Datasheet (PDF)

 ..1. Size:734K  fairchild semi
 fqd30n06ltf fqd30n06ltm fqu30n06ltu.pdf

FQU30N06LTU FQU30N06LTU

January 2009QFETFQD30N06L / FQU30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es

 5.1. Size:734K  fairchild semi
 fqd30n06l fqu30n06l.pdf

FQU30N06LTU FQU30N06LTU

January 2009QFETFQD30N06L / FQU30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP2N050G

 

 
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