FQU30N06LTU Datasheet and Replacement
Type Designator: FQU30N06LTU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: I-PAK
FQU30N06LTU Datasheet (PDF)
fqd30n06ltf fqd30n06ltm fqu30n06ltu.pdf
January 2009QFETFQD30N06L / FQU30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es
fqd30n06l fqu30n06l.pdf
January 2009QFETFQD30N06L / FQU30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es
Datasheet: FQU20N06TU , FQU2N100TU , FQU2N50BTU , FQU2N60CTU , FQU2N60TU , FQU2N80 , FQU2N80TU , FQU2N90TU , IRFP064N , FQU3N40TU , FQU3N60 , FQU3N60CTU , FQU3N60TU , FQU3P20TU , FQU3P50TU , FQU4N20TU , FQU4N25TU .
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