FQU30N06LTU PDF and Equivalents Search

 

FQU30N06LTU Specs and Replacement


   Type Designator: FQU30N06LTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: I-PAK
 

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FQU30N06LTU datasheet

 ..1. Size:734K  fairchild semi
 fqd30n06ltf fqd30n06ltm fqu30n06ltu.pdf pdf_icon

FQU30N06LTU

January 2009 QFET FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es... See More ⇒

 5.1. Size:734K  fairchild semi
 fqd30n06l fqu30n06l.pdf pdf_icon

FQU30N06LTU

January 2009 QFET FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been es... See More ⇒

Detailed specifications: FQU20N06TU , FQU2N100TU , FQU2N50BTU , FQU2N60CTU , FQU2N60TU , FQU2N80 , FQU2N80TU , FQU2N90TU , AO4468 , FQU3N40TU , FQU3N60 , FQU3N60CTU , FQU3N60TU , FQU3P20TU , FQU3P50TU , FQU4N20TU , FQU4N25TU .

History: SVS65R240L8AD4TR | AOD4186

Keywords - FQU30N06LTU MOSFET specs

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