FQU3P20TU Specs and Replacement

Type Designator: FQU3P20TU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: I-PAK

FQU3P20TU substitution

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FQU3P20TU datasheet

 ..1. Size:547K  fairchild semi
 fqd3p20tf fqd3p20tm fqu3p20tu.pdf pdf_icon

FQU3P20TU

April 2000 TM QFET QFET QFET QFET FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technolo... See More ⇒

 9.1. Size:761K  fairchild semi
 fqd3p50tf fqd3p50tm fqd3p50 fqu3p50 fqu3p50tu.pdf pdf_icon

FQU3P20TU

January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been espe... See More ⇒

Detailed specifications: FQU2N80, FQU2N80TU, FQU2N90TU, FQU30N06LTU, FQU3N40TU, FQU3N60, FQU3N60CTU, FQU3N60TU, IRF840, FQU3P50TU, FQU4N20TU, FQU4N25TU, FQU5N40TU, FQU5N50CTU, FQU5N50TU, FQU5N60CTU, FQU5P20TU

Keywords - FQU3P20TU MOSFET specs

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