FQU3P20TU MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU3P20TU
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: I-PAK
FQU3P20TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU3P20TU Datasheet (PDF)
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April 2000TMQFETQFETQFETQFETFQD3P20 / FQU3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technolo
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January 2009QFETFQD3P50 / FQU3P50500V P-Channel MOSFETFeaturesGeneral Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 VThese P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC)transistors are produced using Fairchilds proprietary, Low Crss ( typical 9.5 pF)planar stripe, DMOS technology.This advanced technology has been espe
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