All MOSFET. FQU8N25TU Datasheet

 

FQU8N25TU Datasheet and Replacement


   Type Designator: FQU8N25TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: I-PAK
 

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FQU8N25TU Datasheet (PDF)

 ..1. Size:603K  fairchild semi
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FQU8N25TU

May 2000TMQFETQFETQFETQFETFQD8N25 / FQU8N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.2A, 250V, RDS(on) = 0.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has

Datasheet: FQU5N50TU , FQU5N60CTU , FQU5P20TU , FQU6N40CTU , FQU6P25TU , FQU7N10LTU , FQU7P06TU , FQU7P20TU , AON6414A , FQU8P10TU , FQU9N25TU , IRF6216PBF , IRF6216PBF-1 , IRF6217PBF , IRF6217PBF-1 , IRF6218L , IRF6218PBF .

History: FQU6P25TU | IPD50N06S2L-13 | MSK20P80GNF | MSK30N03DF | IRFL9014TRPBF | LNG2N60 | FDD3682-F085

Keywords - FQU8N25TU MOSFET datasheet

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