FQU8N25TU Specs and Replacement

Type Designator: FQU8N25TU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: I-PAK

FQU8N25TU substitution

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FQU8N25TU datasheet

 ..1. Size:603K  fairchild semi
 fqd8n25tf fqu8n25tu.pdf pdf_icon

FQU8N25TU

May 2000 TM QFET QFET QFET QFET FQD8N25 / FQU8N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.2A, 250V, RDS(on) = 0.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has... See More ⇒

Detailed specifications: FQU5N50TU, FQU5N60CTU, FQU5P20TU, FQU6N40CTU, FQU6P25TU, FQU7N10LTU, FQU7P06TU, FQU7P20TU, IRFB4227, FQU8P10TU, FQU9N25TU, IRF6216PBF, IRF6216PBF-1, IRF6217PBF, IRF6217PBF-1, IRF6218L, IRF6218PBF

Keywords - FQU8N25TU MOSFET specs

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