IRF7351PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7351PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24
nC
trⓘ - Rise Time: 5.9
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0178
Ohm
Package:
SO-8
IRF7351PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7351PBF
Datasheet (PDF)
..1. Size:276K international rectifier
irf7351pbf.pdf
PD - 97436IRF7351PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous Rectifier MOSFET for17.8m@VGS = 10V60V 24nCIsolated DC-DC Convertersl Low Power Motor Drive Systems1 8S1 D1Benefits2 7G1 D1l Ultra-Low Gate Impedance3 6S2 D2l Fully Characterized Avalanche Voltage45G2 D2and Currentl 20V VGS Max. Gate RatingSO-8Top
..2. Size:282K infineon
irf7351pbf.pdf
PD - 97436IRF7351PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous Rectifier MOSFET for17.8m@VGS = 10V60V 24nCIsolated DC-DC Convertersl Low Power Motor Drive Systems1 8S1 D1Benefits2 7G1 D1l Ultra-Low Gate Impedance3 6S2 D2l Fully Characterized Avalanche Voltage45G2 D2and Currentl 20V VGS Max. Gate RatingSO-8Top
8.1. Size:134K international rectifier
irf7353d1pbf.pdf
PD - 95251AIRF7353D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFETand Schottky Diode1 8A KVDSS = 30Vl Ideal For Buck Regulator Applications2 7A Kl N-Channel HEXFET3 6 RDS(on) = 0.029l Low VF Schottky RectifierS Dl Generation 5 Technology45G Dl SO-8 Footprint Schottky Vf = 0.39Vl Lead-FreeTop ViewDescriptionThe FETKY family
8.2. Size:112K international rectifier
irf7353d2.pdf
PD- 93809IRF7353D2 FETKY MOSFET / Schottky Diode Co-Pack HEXFET Power MOSFET and1 8A KSchottky DiodeVDSS = 30V2 7 Ideal For Buck Regulator Applications A K N-Channel HEXFET power MOSFET3 6 RDS(on) = 0.029S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky VF = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKY
8.3. Size:170K international rectifier
irf7353d1.pdf
PD- 91802AIRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8A Kand Schottky DiodeVDSS = 30V2 7 Ideal For Buck Regulator ApplicationsA K N-Channel HEXFET3 6 RDS(on) = 0.029S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.39V SO-8 FootprintTop ViewDescriptionThe FETKY family
8.4. Size:122K international rectifier
irf7353d2pbf.pdf
PD- 95215AIRF7353D2PbFFETKY MOSFET / Schottky Diodel Co-Pack HEXFET Power MOSFET andSchottky Diode1 8A Kl Ideal For Buck Regulator ApplicationsVDSS = 30V2 7l N-Channel HEXFET power MOSFETA Kl Low VF Schottky Rectifier3 6 RDS(on) = 0.029S Dl Generation 5 Technology45G Dl SO-8 FootprintSchottky VF = 0.52Vl Lead-FreeTop ViewDescriptionThe FETK
8.5. Size:238K international rectifier
irf7350.pdf
PD - 94226BIRF7350HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch1 8S1 D1 Dual N and P Channel MOSFET2 7 Surface MountG1 D1VDSS 100V -100V Available in Tape and Reel3 6S2 D24 5G2 D2P-CHANNEL MOSFETRDS(on) 0.21 0.48Top ViewDescriptionThese dual N and P channel HEXFET power MOSFETs from InternationalRectifier utilize
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.