All MOSFET. SEFN9140 Datasheet

 

SEFN9140 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SEFN9140
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SMD-1

 SEFN9140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SEFN9140 Datasheet (PDF)

 ..1. Size:332K  semitronics
 sefn9140.pdf

SEFN9140 SEFN9140

SEMITRONICS CORP. SEFN9140 64 Commercial Street, Freeport, N.Y. 11520 P-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Surface Mount Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ease of Paralleling MIL STX Screening Available APPLICATIONS High Reliability Power Suppli

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