SEFN9140 Specs and Replacement
Type Designator: SEFN9140
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SMD-1
SEFN9140 substitution
- MOSFET ⓘ Cross-Reference Search
SEFN9140 datasheet
sefn9140.pdf
SEMITRONICS CORP. SEFN9140 64 Commercial Street, Freeport, N.Y. 11520 P-Channel MOSFET Phone (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Surface Mount Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ease of Paralleling MIL STX Screening Available APPLICATIONS High Reliability Power Suppli... See More ⇒
Detailed specifications: SDP10N60, SEF401002, SEF40604, SEFM150, SEFM250, SEFM350, SEFM460, SEFN450, IRF520, SEFY140C, SEFY340CSTX, SEFY9130C, SES744, SES759, SES760, SES779, SF1116
Keywords - SEFN9140 MOSFET specs
SEFN9140 cross reference
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