All MOSFET. SEFY9130C Datasheet

 

SEFY9130C Datasheet and Replacement


   Type Designator: SEFY9130C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-257
 

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SEFY9130C Datasheet (PDF)

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SEFY9130C

SEMITRONICS CORP. SEFY9130C 64 Commercial Street, Freeport, N.Y. 11520 P-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Improved Gate, Avalanche and dynamic dv.dt Ruggedness Hermetically Sealed MIL STX Screening Available APPLICATIONS High Reliability Power Supplies

Datasheet: SEFM150 , SEFM250 , SEFM350 , SEFM460 , SEFN450 , SEFN9140 , SEFY140C , SEFY340CSTX , AON6380 , SES744 , SES759 , SES760 , SES779 , SF1116 , SFF044J , SFF054 , SFF054C .

History: OSG95R1K2PF | WMN36N60C4 | KHB4D0N80F2 | STS8216 | WMP13N50C4

Keywords - SEFY9130C MOSFET datasheet

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