SEFY9130C Specs and Replacement
Type Designator: SEFY9130C
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-257
SEFY9130C substitution
- MOSFET ⓘ Cross-Reference Search
SEFY9130C datasheet
sefy9130c.pdf
SEMITRONICS CORP. SEFY9130C 64 Commercial Street, Freeport, N.Y. 11520 P-Channel MOSFET Phone (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Improved Gate, Avalanche and dynamic dv.dt Ruggedness Hermetically Sealed MIL STX Screening Available APPLICATIONS High Reliability Power Supplies ... See More ⇒
Detailed specifications: SEFM150, SEFM250, SEFM350, SEFM460, SEFN450, SEFN9140, SEFY140C, SEFY340CSTX, IRFZ24N, SES744, SES759, SES760, SES779, SF1116, SFF044J, SFF054, SFF054C
Keywords - SEFY9130C MOSFET specs
SEFY9130C cross reference
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SEFY9130C substitution
SEFY9130C replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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