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SES779 Specs and Replacement

Type Designator: SES779

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SMD-1

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SES779 datasheet

 ..1. Size:251K  semitronics
 ses779.pdf pdf_icon

SES779

SEMITRONICS CORP. SES779 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Surface Mount Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ease of Paralleling MIL STX Screening Available APPLICATIONS High Reliability Power Supplies ... See More ⇒

Detailed specifications: SEFN450, SEFN9140, SEFY140C, SEFY340CSTX, SEFY9130C, SES744, SES759, SES760, 75N75, SF1116, SFF044J, SFF054, SFF054C, SH8J62, SH8J65, SH8K11, SH8K12

Keywords - SES779 MOSFET specs

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