All MOSFET. SES779 Datasheet

 

SES779 Datasheet and Replacement


   Type Designator: SES779
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SMD-1
 

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SES779 Datasheet (PDF)

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SES779

SEMITRONICS CORP. SES779 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Surface Mount Case Hermetically Sealed Package Repetitive Avalanche Rating Dynamic dv/dt Rating Ease of Paralleling MIL STX Screening Available APPLICATIONS High Reliability Power Supplies

Datasheet: SEFN450 , SEFN9140 , SEFY140C , SEFY340CSTX , SEFY9130C , SES744 , SES759 , SES760 , IRF520 , SF1116 , SFF044J , SFF054 , SFF054C , SH8J62 , SH8J65 , SH8K11 , SH8K12 .

History: CSD87312Q3E | ELM14430AA | IXTH6N150 | RJK0629DPE | SE6080A | P5002CDG | QM3014P

Keywords - SES779 MOSFET datasheet

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