SH8K32 MOSFET. Datasheet pdf. Equivalent
Type Designator: SH8K32
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOP-8
SH8K32 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SH8K32 Datasheet (PDF)
sh8k32.pdf
4V Drive Nch+Nch MOSFET SH8K32 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Switching Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5)(8) (7) (6) (5)Package TapingType Code TBBasic ordering unit (piec
Datasheet: SH8K11 , SH8K12 , SH8K13 , SH8K14 , SH8K15 , SH8K22 , SH8K25 , SH8K26 , MDF11N65B , SH8M11 , SH8M12 , SH8M13 , SH8M14 , SH8M24 , SH8M41 , SHD217302A , SHD218409B .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100