SH8M24 MOSFET. Datasheet pdf. Equivalent
Type Designator: SH8M24
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.8 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: SOP-8
SH8M24 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SH8M24 Datasheet (PDF)
sh8m24.pdf
4V Drive Nch+Pch MOSFET SH8M24 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Switching Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5)Package TapingType Code TBBasic
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