SH8M41 MOSFET. Datasheet pdf. Equivalent
Type Designator: SH8M41
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.6 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOP-8
SH8M41 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SH8M41 Datasheet (PDF)
..1. Size:186K rohm
sh8m41.pdf
sh8m41.pdf
4V Drive Nch + Pch MOSFET SH8M41 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET/SOP8Silicon P-channel MOSFET(8) (7) (6)Features1) Low on-resistance.(2) (3)2) Built-in G-S Protection Diode.3) Small Surface Mount Package (SOP8). ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TBBas
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