IRL2505 MOSFET Datasheet: N-Ch, 55V, 104A. Full specification with pinout and replacement list

IRL2505 Specs and Replacement

Type Designator: IRL2505

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 104 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 1100 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

IRL2505 substitution

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IRL2505 datasheet

..1. Size:108K international rectifier
irl2505.pdf pdf_icon

PD - 91325C IRL2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre... See More ⇒

..2. Size:223K international rectifier
irl2505pbf.pdf pdf_icon

PD -95622 IRL2505PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.008 l Fast Switching G l Fully Avalanche Rated ID = 104A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech... See More ⇒

..3. Size:245K inchange semiconductor
irl2505.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL2505 IIRL2505 FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R... See More ⇒

0.1. Size:178K international rectifier
irl2505s irl2505l.pdf pdf_icon

PD - 91326D IRL2505S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRL2505S) Low-profile through-hole (IRL2505L) 175 C Operating Temperature RDS(on) = 0.008 Fast Switching G Fully Avalanche Rated ID = 104A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu... See More ⇒