All MOSFET. SHDCG225715 Datasheet

 

SHDCG225715 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SHDCG225715
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-254

 SHDCG225715 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SHDCG225715 Datasheet (PDF)

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 shdcg225715.pdf

SHDCG225715 SHDCG225715

SHD225715 SENSITRON SHDCG225715 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4340, REV. - LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 60 Volt, 0.008 Ohm, 110A MOSFET for Glidcop version Isolated Hermetic Metal Package Ultra Low RDS (on) Available with Ceramic Seals and Glidcop leads, use part number SHDCG225715 MAXIMUM RATINGS ALL RATINGS ARE AT TC =

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History: SIR876DP | BUK7C10-75AITE | SIR422DP-T1-GE3

 

 
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