All MOSFET. SHDG225509 Datasheet

 

SHDG225509 Datasheet and Replacement


   Type Designator: SHDG225509
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-254
 

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SHDG225509 Datasheet (PDF)

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SHDG225509

SENSITRON SHD225509 SHDC225509 SEMICONDUCTOR SHDG225509 TECHNICAL DATA DATA SHEET 4964, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 6A, 2 Ohm, MOSFET Isolated Hermetic Metal Package Fast intrinsic Rectifier Low RDS (on) Ceramic Seals with Glidcop leads (SHDG225509) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE S

Datasheet: IRF7401PBF-1 , IRF7402PBF , IRF7403PBF , SHDC220455 , SHDC224701 , SHDC225456 , SHDC225509 , SHDCG225715 , IRFB3607 , SIA400EDJ , SIA406DJ , SIA408DJ , SIA411DJ , SIA413ADJ , SIA413DJ , SIA414DJ , SIA415DJ .

History: IRF2907ZS

Keywords - SHDG225509 MOSFET datasheet

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