SHDG225509 Datasheet. Specs and Replacement

Type Designator: SHDG225509  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-254

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SHDG225509 datasheet

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SHDG225509

SENSITRON SHD225509 SHDC225509 SEMICONDUCTOR SHDG225509 TECHNICAL DATA DATA SHEET 4964, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES 1000 Volt, 6A, 2 Ohm, MOSFET Isolated Hermetic Metal Package Fast intrinsic Rectifier Low RDS (on) Ceramic Seals with Glidcop leads (SHDG225509) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE S... See More ⇒

Detailed specifications: IRF7401PBF-1, IRF7402PBF, IRF7403PBF, SHDC220455, SHDC224701, SHDC225456, SHDC225509, SHDCG225715, P55NF06, SIA400EDJ, SIA406DJ, SIA408DJ, SIA411DJ, SIA413ADJ, SIA413DJ, SIA414DJ, SIA415DJ

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