SHDG225509 Spec and Replacement
Type Designator: SHDG225509
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-254
SHDG225509 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SHDG225509 Specs
shdc225509 shdg225509.pdf
SENSITRON SHD225509 SHDC225509 SEMICONDUCTOR SHDG225509 TECHNICAL DATA DATA SHEET 4964, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES 1000 Volt, 6A, 2 Ohm, MOSFET Isolated Hermetic Metal Package Fast intrinsic Rectifier Low RDS (on) Ceramic Seals with Glidcop leads (SHDG225509) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE S... See More ⇒
Detailed specifications: IRF7401PBF-1 , IRF7402PBF , IRF7403PBF , SHDC220455 , SHDC224701 , SHDC225456 , SHDC225509 , SHDCG225715 , K4145 , SIA400EDJ , SIA406DJ , SIA408DJ , SIA411DJ , SIA413ADJ , SIA413DJ , SIA414DJ , SIA415DJ .
History: ZVN4206ASTZ | STP4NA60
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