SIA400EDJ Datasheet. Specs and Replacement
Type Designator: SIA400EDJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 132 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SC-70-6L
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SIA400EDJ substitution
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SIA400EDJ datasheet
sia400edj.pdf
New Product SiA400EDJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.019 at VGS = 4.5 V RoHS 12 New Thermally Enhanced PowerPAK COMPLIANT 30 11.6 0.025 at VGS = 2.5 V 12 SC-70 Package - Small Footprint Area Typic... See More ⇒
sia408dj.pdf
SiA408DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.036 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAK 30 0.039 at VGS = 4.5 V 4.5 7 nC SC-70 Package 0.053 at VGS = 2.5 V 4.5 - Small Footprint Area Compliant to ... See More ⇒
sia406dj.pdf
New Product SiA406DJ Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0198 at VGS = 4.5 V 4.5 TrenchFET Power MOSFET 0.0222 at VGS = 2.5 V 12 4.5 13.7 nC New Thermally Enhanced PowerPAK 0.0264 at VGS = 1.8 V SC-70 Package 4.5 - Small Footprint... See More ⇒
Detailed specifications: IRF7402PBF, IRF7403PBF, SHDC220455, SHDC224701, SHDC225456, SHDC225509, SHDCG225715, SHDG225509, SPP20N60C3, SIA406DJ, SIA408DJ, SIA411DJ, SIA413ADJ, SIA413DJ, SIA414DJ, SIA415DJ, SIA416DJ
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MOSFET Parameters. How They Affect Each Other
History: SIHF12N65E
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