SIA406DJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SIA406DJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.2 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 345 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0198 Ohm
Package: SC-70-6L
SIA406DJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIA406DJ Datasheet (PDF)
sia406dj.pdf
New ProductSiA406DJVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0198 at VGS = 4.5 V 4.5 TrenchFET Power MOSFET0.0222 at VGS = 2.5 V 12 4.5 13.7 nC New Thermally Enhanced PowerPAK0.0264 at VGS = 1.8 V SC-70 Package4.5- Small Footprint
sia400edj.pdf
New ProductSiA400EDJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.019 at VGS = 4.5 V RoHS12 New Thermally Enhanced PowerPAK COMPLIANT30 11.60.025 at VGS = 2.5 V 12SC-70 Package- Small Footprint Area Typic
sia408dj.pdf
SiA408DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.036 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAK30 0.039 at VGS = 4.5 V 4.5 7 nCSC-70 Package0.053 at VGS = 2.5 V 4.5- Small Footprint Area Compliant to
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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