SIA408DJ Datasheet and Replacement
Type Designator: SIA408DJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SC-70-6L
- MOSFET Cross-Reference Search
SIA408DJ Datasheet (PDF)
sia408dj.pdf

SiA408DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.036 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAK30 0.039 at VGS = 4.5 V 4.5 7 nCSC-70 Package0.053 at VGS = 2.5 V 4.5- Small Footprint Area Compliant to
sia400edj.pdf

New ProductSiA400EDJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.019 at VGS = 4.5 V RoHS12 New Thermally Enhanced PowerPAK COMPLIANT30 11.60.025 at VGS = 2.5 V 12SC-70 Package- Small Footprint Area Typic
sia406dj.pdf

New ProductSiA406DJVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0198 at VGS = 4.5 V 4.5 TrenchFET Power MOSFET0.0222 at VGS = 2.5 V 12 4.5 13.7 nC New Thermally Enhanced PowerPAK0.0264 at VGS = 1.8 V SC-70 Package4.5- Small Footprint
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI8802DB | SI8822 | 2SK2973 | 2N7071 | SIB411DK | 2SK3018S3 | SI9434BDY
Keywords - SIA408DJ MOSFET datasheet
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History: SI8802DB | SI8822 | 2SK2973 | 2N7071 | SIB411DK | 2SK3018S3 | SI9434BDY



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