SIA417DJ PDF and Equivalents Search

 

SIA417DJ Specs and Replacement

Type Designator: SIA417DJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 500 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SC-70-6L

SIA417DJ substitution

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SIA417DJ datasheet

 ..1. Size:93K  vishay
sia417dj.pdf pdf_icon

SIA417DJ

New Product SiA417DJ Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.023 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS 0.031 at VGS = - 2.5 V - 12a COMPLIANT SC-70 Package 0.040 at VGS = - 1.8 V - 8 - Small Footprint Area - 12a 19 nC - Low On-Res... See More ⇒

 9.1. Size:211K  vishay
sia413dj.pdf pdf_icon

SIA417DJ

SiA413DJ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.029 at VGS = - 4.5 V - 12a - Small Footprint Area 0.034 at VGS = - 2.5 V - 12a - Low On-Resistance - 12 23 nC 0.044 at VGS = - 1.8 V - 12a Material categorization 0.1... See More ⇒

 9.2. Size:193K  vishay
sia418dj.pdf pdf_icon

SIA417DJ

SiA418DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg Tested 0.018 at VGS = 10 V Material categorization 12 30 5 nC For definitions of compliance please see 0.022 at VGS = 4.5 V 12 www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single APPLICATIONS DC/DC... See More ⇒

 9.3. Size:203K  vishay
sia414dj.pdf pdf_icon

SIA417DJ

SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAK VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) SC-70 Package 0.011 at VGS = 4.5 V 12 - Small Footprint Area Material categorization 0.013 at VGS = 2.5 V 12 For definitions of compliance please see 0.016 at VGS = 1.8 V 8 12 19 nC ... See More ⇒

Detailed specifications: SIA406DJ , SIA408DJ , SIA411DJ , SIA413ADJ , SIA413DJ , SIA414DJ , SIA415DJ , SIA416DJ , NCEP15T14 , SIA418DJ , SIA419DJ , SIA421DJ , SIA425EDJ , SIA426DJ , SIA427ADJ , SIA427DJ , SIA429DJT .

History: IRF633

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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