All MOSFET. SIA483DJ Datasheet

 

SIA483DJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIA483DJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SC-70-6L

 SIA483DJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIA483DJ Datasheet (PDF)

 ..1. Size:227K  vishay
 sia483dj.pdf

SIA483DJ SIA483DJ

New ProductSiA483DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.021at VGS = - 10 V - 12a- 30 21 nC- Low On-Resistance0.030 at VGS = - 4.5 V - 12a 100 % Rg Tested Material categorization:For d

 9.1. Size:240K  vishay
 sia485dj.pdf

SIA483DJ SIA483DJ

SiA485DJwww.vishay.comVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (Typ.) Thermally enhanced PowerPAK SC-70 package 2.6 at VGS = -10 V -1.6 a-150 4.2 nC- Small footprint area 2.7 at VGS = -6 V -1.6 a- Low on-resistancePowerPAK SC-70-6L Single 100 % Rg and UIS testedD

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History: HUF75344G3 | SSPS924NE

 

 
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