SIA483DJ Datasheet. Specs and Replacement

Type Designator: SIA483DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: SC-70-6L

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SIA483DJ datasheet

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SIA483DJ

New Product SiA483DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package - Small Footprint Area 0.021at VGS = - 10 V - 12a - 30 21 nC - Low On-Resistance 0.030 at VGS = - 4.5 V - 12a 100 % Rg Tested Material categorization For d... See More ⇒

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SIA483DJ

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Detailed specifications: SIA449DJ, SIA450DJ, SIA453EDJ, SIA456DJ, SIA459EDJ, SIA461DJ, SIA462DJ, SIA466EDJ, IRLB3034, SIA485DJ, SIA519EDJ, SIA527DJ, SIA533EDJ, SIA537EDJ, SIA810DJ, SIA811ADJ, SIA811DJ

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