All MOSFET. SIA485DJ Datasheet

 

SIA485DJ Datasheet and Replacement


   Type Designator: SIA485DJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: SC-70-6L
 

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SIA485DJ Datasheet (PDF)

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SIA485DJ

SiA485DJwww.vishay.comVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (Typ.) Thermally enhanced PowerPAK SC-70 package 2.6 at VGS = -10 V -1.6 a-150 4.2 nC- Small footprint area 2.7 at VGS = -6 V -1.6 a- Low on-resistancePowerPAK SC-70-6L Single 100 % Rg and UIS testedD

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SIA485DJ

New ProductSiA483DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.021at VGS = - 10 V - 12a- 30 21 nC- Low On-Resistance0.030 at VGS = - 4.5 V - 12a 100 % Rg Tested Material categorization:For d

Datasheet: SIA450DJ , SIA453EDJ , SIA456DJ , SIA459EDJ , SIA461DJ , SIA462DJ , SIA466EDJ , SIA483DJ , AON7403 , SIA519EDJ , SIA527DJ , SIA533EDJ , SIA537EDJ , SIA810DJ , SIA811ADJ , SIA811DJ , SIA813DJ .

History: NCE65N330D | SVS70R360SE3 | SIHFB9N65A | SUM110N08-07P | HGI077N10SL | IXTT11P50 | SVS70R900SE3TR

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