SIA485DJ Datasheet and Replacement
Type Designator: SIA485DJ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: SC-70-6L
SIA485DJ substitution
SIA485DJ Datasheet (PDF)
sia485dj.pdf

SiA485DJwww.vishay.comVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (Typ.) Thermally enhanced PowerPAK SC-70 package 2.6 at VGS = -10 V -1.6 a-150 4.2 nC- Small footprint area 2.7 at VGS = -6 V -1.6 a- Low on-resistancePowerPAK SC-70-6L Single 100 % Rg and UIS testedD
sia483dj.pdf

New ProductSiA483DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.021at VGS = - 10 V - 12a- 30 21 nC- Low On-Resistance0.030 at VGS = - 4.5 V - 12a 100 % Rg Tested Material categorization:For d
Datasheet: SIA450DJ , SIA453EDJ , SIA456DJ , SIA459EDJ , SIA461DJ , SIA462DJ , SIA466EDJ , SIA483DJ , MMD60R360PRH , SIA519EDJ , SIA527DJ , SIA533EDJ , SIA537EDJ , SIA810DJ , SIA811ADJ , SIA811DJ , SIA813DJ .
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