SIA485DJ PDF and Equivalents Search

 

SIA485DJ Specs and Replacement

Type Designator: SIA485DJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: SC-70-6L

SIA485DJ substitution

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SIA485DJ datasheet

 ..1. Size:240K  vishay
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SIA485DJ

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 9.1. Size:227K  vishay
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SIA485DJ

New Product SiA483DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package - Small Footprint Area 0.021at VGS = - 10 V - 12a - 30 21 nC - Low On-Resistance 0.030 at VGS = - 4.5 V - 12a 100 % Rg Tested Material categorization For d... See More ⇒

Detailed specifications: SIA450DJ , SIA453EDJ , SIA456DJ , SIA459EDJ , SIA461DJ , SIA462DJ , SIA466EDJ , SIA483DJ , IRF9640 , SIA519EDJ , SIA527DJ , SIA533EDJ , SIA537EDJ , SIA810DJ , SIA811ADJ , SIA811DJ , SIA813DJ .

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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