All MOSFET. SIA850DJ Datasheet

 

SIA850DJ Datasheet and Replacement


   Type Designator: SIA850DJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 0.47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: SC-70-6
 

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SIA850DJ Datasheet (PDF)

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SIA850DJ

New ProductSiA850DJVishay SiliconixN-Channel 190-V (D-S) MOSFET with 190-V DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET3.8 at VGS = 4.5 V 0.95 New Thermally Enhanced PowerPAK190 4.2 at VGS = 2.5 V 0.9 1.4 nCSC-70 Package17 at VGS = 1.8 V 0.3- Small

Datasheet: SIA533EDJ , SIA537EDJ , SIA810DJ , SIA811ADJ , SIA811DJ , SIA813DJ , SIA814DJ , SIA817EDJ , IRF730 , SIA906EDJ , SIA907EDJT , SIA910EDJ , SIA911ADJ , SIA913ADJ , SIA914ADJ , SIA915DJ , SIA920DJ .

History: CMLDM7484 | SIA817EDJ | PD1503YVS | IPB60R099P7 | P0910ATF

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