SIA850DJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SIA850DJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 0.47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: SC-70-6
SIA850DJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIA850DJ Datasheet (PDF)
..1. Size:111K vishay
sia850dj.pdf
sia850dj.pdf
New ProductSiA850DJVishay SiliconixN-Channel 190-V (D-S) MOSFET with 190-V DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET3.8 at VGS = 4.5 V 0.95 New Thermally Enhanced PowerPAK190 4.2 at VGS = 2.5 V 0.9 1.4 nCSC-70 Package17 at VGS = 1.8 V 0.3- Small
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