SIA850DJ Datasheet. Specs and Replacement

Type Designator: SIA850DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 190 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 0.47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm

Package: SC-70-6

SIA850DJ substitution

- MOSFET ⓘ Cross-Reference Search

 

SIA850DJ datasheet

 ..1. Size:111K  vishay
 sia850dj.pdf pdf_icon

SIA850DJ

New Product SiA850DJ Vishay Siliconix N-Channel 190-V (D-S) MOSFET with 190-V Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A)a LITTLE FOOT Plus Schottky Power MOSFET 3.8 at VGS = 4.5 V 0.95 New Thermally Enhanced PowerPAK 190 4.2 at VGS = 2.5 V 0.9 1.4 nC SC-70 Package 17 at VGS = 1.8 V 0.3 - Small ... See More ⇒

Detailed specifications: SIA533EDJ, SIA537EDJ, SIA810DJ, SIA811ADJ, SIA811DJ, SIA813DJ, SIA814DJ, SIA817EDJ, AO4468, SIA906EDJ, SIA907EDJT, SIA910EDJ, SIA911ADJ, SIA913ADJ, SIA914ADJ, SIA915DJ, SIA920DJ

Keywords - SIA850DJ MOSFET specs

 SIA850DJ cross reference

 SIA850DJ equivalent finder

 SIA850DJ pdf lookup

 SIA850DJ substitution

 SIA850DJ replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility