SIA910EDJ Datasheet. Specs and Replacement

Type Designator: SIA910EDJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SC-70-6

SIA910EDJ substitution

- MOSFET ⓘ Cross-Reference Search

 

SIA910EDJ datasheet

 ..1. Size:271K  vishay
sia910edj.pdf pdf_icon

SIA910EDJ

SiA910EDJ Vishay Siliconix Dual N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Thermally Enhanced PowerPAK ID (A)a Qg (Typ.) SC-70 Package 0.028 at VGS = 4.5 V 4.5 - Small Footprint Area 12 0.033 at VGS = 2.5 V 6.2 nC 4.5 - Low On-Resistance Typical ESD Protection 2400 V 0.042 at Vgs = 1.8 V 4.5 100 % R... See More ⇒

 9.1. Size:280K  vishay
sia914adj.pdf pdf_icon

SIA910EDJ

SiA914ADJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK 0.043 at VGS = 4.5 V 4.5 SC-70 Package 0.045 at VGS = 3.7 V 4.5 - Small Footprint Area 20 3.5 nC 0.050 at VGS = 2.5 V 4.5 - Low On-Resistance 0.063 at VGS = 1.8 V 4... See More ⇒

 9.2. Size:225K  vishay
sia914dj.pdf pdf_icon

SIA910EDJ

New Product SiA914DJ Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.053 at VGS = 4.5 V 4.5 New Thermally Enhanced PowerPAK RoHS COMPLIANT SC-70 Package 0.063 at VGS = 2.5 V 20 4.5 4.1 nC - Small Footprint Area 0.077 at VGS = 1.8 V 4.5 - Low On-Resi... See More ⇒

 9.3. Size:192K  vishay
sia913adj.pdf pdf_icon

SIA910EDJ

New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.061 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK 0.081 at VGS = - 2.5 V - 12 - 4.5a 8.2 nC SC-70 Package 0.115 at VGS = - 1.8 V - Small Footprint ... See More ⇒

Detailed specifications: SIA811ADJ, SIA811DJ, SIA813DJ, SIA814DJ, SIA817EDJ, SIA850DJ, SIA906EDJ, SIA907EDJT, IRF3205, SIA911ADJ, SIA913ADJ, SIA914ADJ, SIA915DJ, SIA920DJ, SIA921EDJ, SIA922EDJ, SIA923EDJ

Keywords - SIA910EDJ MOSFET specs

 SIA910EDJ cross reference

 SIA910EDJ equivalent finder

 SIA910EDJ pdf lookup

 SIA910EDJ substitution

 SIA910EDJ replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs