SIA911ADJ Datasheet. Specs and Replacement

Type Designator: SIA911ADJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.116 Ohm

Package: SC-70-6

SIA911ADJ substitution

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SIA911ADJ datasheet

 ..1. Size:189K  vishay
 sia911adj.pdf pdf_icon

SIA911ADJ

New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.116 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK RoHS 0.155 at VGS = - 2.5 V - 20 - 4.5a 4.9 nC COMPLIANT SC-70 Package 0.205 at VGS = - 1.8 V - Small Footprint Area - 4.5... See More ⇒

 6.1. Size:188K  vishay
 sia911ad.pdf pdf_icon

SIA911ADJ

New Product SiA911ADJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.116 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK RoHS 0.155 at VGS = - 2.5 V - 20 - 4.5a 4.9 nC COMPLIANT SC-70 Package 0.205 at VGS = - 1.8 V - Small Footprint Area - 4.5... See More ⇒

 8.1. Size:192K  vishay
 sia911dj.pdf pdf_icon

SIA911ADJ

SiA911DJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.094 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK RoHS 0.131 at VGS = - 2.5 V - 20 - 4.5a 4.9 nC COMPLIANT SC-70 Package 0.185 at VGS = - 1.8 V - Small Footprint Area - 4.5a - Low On-Re... See More ⇒

 8.2. Size:200K  vishay
 sia911ed.pdf pdf_icon

SIA911ADJ

SiA911EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.101 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK 0.141 at VGS = - 2.5 V - 20 - 4.5a 4.9 nC SC-70 Package 0.192 at VGS = - 1.8 V - 2 - Small Footpr... See More ⇒

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Detailed specifications: SIA811DJ, SIA813DJ, SIA814DJ, SIA817EDJ, SIA850DJ, SIA906EDJ, SIA907EDJT, SIA910EDJ, IRF740, SIA913ADJ, SIA914ADJ, SIA915DJ, SIA920DJ, SIA921EDJ, SIA922EDJ, SIA923EDJ, SIA929DJ

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