SIA975DJ Datasheet. Specs and Replacement

Type Designator: SIA975DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: SC-70-6

SIA975DJ substitution

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SIA975DJ datasheet

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SIA975DJ

New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.041 at VGS = - 4.5 V - 4.5a TrenchFET Power MOSFET 0.060 at VGS = - 2.5 V - 12 New Thermally Enhanced PowerPAK - 4.5a 10.5 nC SC-70 Package 0.110 at VGS = - 1.8 V - 3.5... See More ⇒

Detailed specifications: SIA914ADJ, SIA915DJ, SIA920DJ, SIA921EDJ, SIA922EDJ, SIA923EDJ, SIA929DJ, SIA931DJ, IRLZ44N, SIB404DK, SIB406EDK, SIB408DK, SIB410DK, SIB411DK, SIB412DK, SIB413DK, SIB414DK

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.