All MOSFET. SIA975DJ Datasheet

 

SIA975DJ Datasheet and Replacement


   Type Designator: SIA975DJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SC-70-6
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SIA975DJ Datasheet (PDF)

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SIA975DJ

New ProductSiA975DJVishay SiliconixDual P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.041 at VGS = - 4.5 V - 4.5a TrenchFET Power MOSFET0.060 at VGS = - 2.5 V - 12 New Thermally Enhanced PowerPAK- 4.5a 10.5 nCSC-70 Package0.110 at VGS = - 1.8 V - 3.5

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