SIB408DK Datasheet. Specs and Replacement

Type Designator: SIB408DK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SC-75-6L

SIB408DK substitution

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SIB408DK datasheet

 ..1. Size:224K  vishay
 sib408dk.pdf pdf_icon

SIB408DK

New Product SiB408DK Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.040 at VGS = 10 V 7a TrenchFET Power MOSFET 30 2.9 nC 0.050 at VGS = 4.5 V 7a New Thermally Enhanced PowerPAK SC-75 Package - Small Footprint Area - Low On-Resistance 100 ... See More ⇒

 9.1. Size:220K  vishay
 sib406ed.pdf pdf_icon

SIB408DK

New Product SiB406EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK 6 20 3.5 nC SC-75 Package 0.063 at VGS = 2.5 V 6 - Small Footprint Area - Low On-Resistance Typical ESD Pr... See More ⇒

 9.2. Size:222K  vishay
 sib406edk.pdf pdf_icon

SIB408DK

New Product SiB406EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK 6 20 3.5 nC SC-75 Package 0.063 at VGS = 2.5 V 6 - Small Footprint Area - Low On-Resistance Typical ESD Pr... See More ⇒

 9.3. Size:189K  vishay
 sib404dk.pdf pdf_icon

SIB408DK

New Product SiB404DK Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A)a Definition 0.019 at VGS = 4.5 V 9 TrenchFET Power MOSFET 0.022 at VGS = 2.5 V 9 New Thermally Enhanced PowerPAK 12 9.6 nC 0.026 at VGS = 1.8 V 9 SC-75 Package - Small Footprint Area 0.065... See More ⇒

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Detailed specifications: SIA921EDJ, SIA922EDJ, SIA923EDJ, SIA929DJ, SIA931DJ, SIA975DJ, SIB404DK, SIB406EDK, IRFP260N, SIB410DK, SIB411DK, SIB412DK, SIB413DK, SIB414DK, SIB415DK, SIB417AEDK, SIB417DK

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