All MOSFET. SIB408DK Datasheet

 

SIB408DK Datasheet and Replacement


   Type Designator: SIB408DK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SC-75-6L
 

 SIB408DK substitution

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SIB408DK Datasheet (PDF)

 ..1. Size:224K  vishay
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SIB408DK

New ProductSiB408DKVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.040 at VGS = 10 V 7a TrenchFET Power MOSFET30 2.9 nC0.050 at VGS = 4.5 V 7a New Thermally Enhanced PowerPAKSC-75 Package- Small Footprint Area- Low On-Resistance 100

 9.1. Size:220K  vishay
sib406ed.pdf pdf_icon

SIB408DK

New ProductSiB406EDKVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK620 3.5 nCSC-75 Package0.063 at VGS = 2.5 V 6- Small Footprint Area- Low On-Resistance Typical ESD Pr

 9.2. Size:222K  vishay
sib406edk.pdf pdf_icon

SIB408DK

New ProductSiB406EDKVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK620 3.5 nCSC-75 Package0.063 at VGS = 2.5 V 6- Small Footprint Area- Low On-Resistance Typical ESD Pr

 9.3. Size:189K  vishay
sib404dk.pdf pdf_icon

SIB408DK

New ProductSiB404DKVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)aDefinition0.019 at VGS = 4.5 V 9 TrenchFET Power MOSFET0.022 at VGS = 2.5 V 9 New Thermally Enhanced PowerPAK12 9.6 nC0.026 at VGS = 1.8 V 9SC-75 Package- Small Footprint Area0.065

Datasheet: SIA921EDJ , SIA922EDJ , SIA923EDJ , SIA929DJ , SIA931DJ , SIA975DJ , SIB404DK , SIB406EDK , 10N60 , SIB410DK , SIB411DK , SIB412DK , SIB413DK , SIB414DK , SIB415DK , SIB417AEDK , SIB417DK .

History: AP6683GYT-HF | SPP03N60C3 | IPB45N06S4-09 | TSM2312CX | CJQ4406 | 2N7002NXBK | P1604ETF

Keywords - SIB408DK MOSFET datasheet

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