All MOSFET. SIB417EDK Datasheet

 

SIB417EDK Datasheet and Replacement


   Type Designator: SIB417EDK
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SC-75-6L
 

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SIB417EDK Datasheet (PDF)

 ..1. Size:209K  vishay
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SIB417EDK

SiB417EDKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAKSC-75 Package- 8 0.100 at VGS = - 1.8 V - 4.07.3 nC- Small Footprint Are

 6.1. Size:207K  vishay
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SIB417EDK

SiB417EDKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAKSC-75 Package- 8 0.100 at VGS = - 1.8 V - 4.07.3 nC- Small Footprint Are

 8.1. Size:218K  vishay
sib417aedk.pdf pdf_icon

SIB417EDK

SiB417AEDKVishay SiliconixP-Channel 1.2 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)g Qg (Typ.) Thermally Enhanced PowerPAK0.032 at VGS = - 4.5 V - 9a SC-75 Package0.045 at VGS = - 2.5 V - Small Footprint Area- 9a- Low On-Resistance- 8 0.063 at VGS = - 1.8 V - 9a 11.3 nC 100 % Rg Tested0.120 at VG

 8.2. Size:227K  vishay
sib417dk.pdf pdf_icon

SIB417EDK

New ProductSiB417DKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.052 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAKRoHS0.070 at VGS = - 2.5 V COMPLIANT- 9aSC-75 Package- Small Footprint Area- 8 0.093 at VGS = - 1.8 V - 4.07.78 nC- Low On-

Datasheet: SIB410DK , SIB411DK , SIB412DK , SIB413DK , SIB414DK , SIB415DK , SIB417AEDK , SIB417DK , 2SK3878 , SIB419DK , SIB422EDK , SIB433EDK , SIB437EDKT , SIB441EDK , SIB452DK , SIB455EDK , SIB456DK .

History: NTMFS4H01NF | P2610BT | DMN3035LWN | KQB3N40 | IRFZ14S | IPB34CN10N | FQD2N50TF

Keywords - SIB417EDK MOSFET datasheet

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