SIB422EDK Datasheet. Specs and Replacement

Type Designator: SIB422EDK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SC-75-6L

SIB422EDK substitution

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SIB422EDK datasheet

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SIB422EDK

New Product SiB422EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A)a Definition 0.030 at VGS = 4.5 V 9 TrenchFET Power MOSFET 0.041 at VGS = 2.5 V 9 New Thermally Enhanced PowerPAK 20 6 nC 0.057 at VGS = 1.8 V 9 SC-75 Package - Small Footprint Area 0.082 a... See More ⇒

Detailed specifications: SIB412DK, SIB413DK, SIB414DK, SIB415DK, SIB417AEDK, SIB417DK, SIB417EDK, SIB419DK, IRFP250N, SIB433EDK, SIB437EDKT, SIB441EDK, SIB452DK, SIB455EDK, SIB456DK, SIB457EDK, SIB488DK

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