All MOSFET. SIB422EDK Datasheet

 

SIB422EDK Datasheet and Replacement


   Type Designator: SIB422EDK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 7.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SC-75-6L
 

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SIB422EDK Datasheet (PDF)

 ..1. Size:226K  vishay
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SIB422EDK

New ProductSiB422EDKVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)aDefinition0.030 at VGS = 4.5 V 9 TrenchFET Power MOSFET0.041 at VGS = 2.5 V 9 New Thermally Enhanced PowerPAK20 6 nC0.057 at VGS = 1.8 V 9SC-75 Package- Small Footprint Area0.082 a

Datasheet: SIB412DK , SIB413DK , SIB414DK , SIB415DK , SIB417AEDK , SIB417DK , SIB417EDK , SIB419DK , AON7408 , SIB433EDK , SIB437EDKT , SIB441EDK , SIB452DK , SIB455EDK , SIB456DK , SIB457EDK , SIB488DK .

Keywords - SIB422EDK MOSFET datasheet

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