All MOSFET. SIB441EDK Datasheet

 

SIB441EDK Datasheet and Replacement


   Type Designator: SIB441EDK
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 8.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0255 Ohm
   Package: SC-75-6L
 

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SIB441EDK Datasheet (PDF)

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SIB441EDK

New ProductSiB441EDKVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAKSC-75 Package0.0255 at VGS = - 4.5 V - 9a- Small Footprint Area0.0280 at VGS = - 3.7 V - 9a- Low On-Resistance- 12 0.0360 at VGS = - 2.5 V - 9a 13.4 nC Typical ESD

Datasheet: SIB415DK , SIB417AEDK , SIB417DK , SIB417EDK , SIB419DK , SIB422EDK , SIB433EDK , SIB437EDKT , 2N7000 , SIB452DK , SIB455EDK , SIB456DK , SIB457EDK , SIB488DK , SIB800EDK , SIB911DK , SIB912DK .

History: IPB80N06S2L-06 | SVS7N60DD2TR | QM4013S | P3606BEA | NTLJS2103PTAG | 7NM70G-TMN2-T | UPA1913

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