SIB441EDK Datasheet. Specs and Replacement

Type Designator: SIB441EDK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0255 Ohm

Package: SC-75-6L

SIB441EDK substitution

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SIB441EDK datasheet

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SIB441EDK

New Product SiB441EDK Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-75 Package 0.0255 at VGS = - 4.5 V - 9a - Small Footprint Area 0.0280 at VGS = - 3.7 V - 9a - Low On-Resistance - 12 0.0360 at VGS = - 2.5 V - 9a 13.4 nC Typical ESD ... See More ⇒

Detailed specifications: SIB415DK, SIB417AEDK, SIB417DK, SIB417EDK, SIB419DK, SIB422EDK, SIB433EDK, SIB437EDKT, AON7408, SIB452DK, SIB455EDK, SIB456DK, SIB457EDK, SIB488DK, SIB800EDK, SIB911DK, SIB912DK

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