SIB488DK Datasheet. Specs and Replacement

Type Designator: SIB488DK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SC-75-6L

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SIB488DK datasheet

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SIB488DK

New Product SiB488DK Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.020 at VGS = 4.5 V TrenchFET Power MOSFET 9 New Thermally Enhanced PowerPAK 0.024 at VGS = 2.5 V 12 9 7.5 nC SC-75 Package 0.029 at VGS = 1.8 V 9 - Small Footprint Area - Low ... See More ⇒

Detailed specifications: SIB422EDK, SIB433EDK, SIB437EDKT, SIB441EDK, SIB452DK, SIB455EDK, SIB456DK, SIB457EDK, IRF4905, SIB800EDK, SIB911DK, SIB912DK, SIB914DK, SIE726DF, SIE800DF, SIE802DF, SIE804DF

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