All MOSFET. SIB488DK Datasheet

 

SIB488DK Datasheet and Replacement


   Type Designator: SIB488DK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SC-75-6L
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SIB488DK Datasheet (PDF)

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SIB488DK

New ProductSiB488DKVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.020 at VGS = 4.5 V TrenchFET Power MOSFET9 New Thermally Enhanced PowerPAK0.024 at VGS = 2.5 V 12 9 7.5 nCSC-75 Package0.029 at VGS = 1.8 V 9- Small Footprint Area- Low

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFZ44VZLPBF | SI4448DY | SI4804CDY | 2N7002(Z) | 2SK3028 | SI4634DY | SIB415DK

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