All MOSFET. SIB488DK Datasheet

 

SIB488DK Datasheet and Replacement


   Type Designator: SIB488DK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SC-75-6L
 

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SIB488DK Datasheet (PDF)

 ..1. Size:227K  vishay
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SIB488DK

New ProductSiB488DKVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.020 at VGS = 4.5 V TrenchFET Power MOSFET9 New Thermally Enhanced PowerPAK0.024 at VGS = 2.5 V 12 9 7.5 nCSC-75 Package0.029 at VGS = 1.8 V 9- Small Footprint Area- Low

Datasheet: SIB422EDK , SIB433EDK , SIB437EDKT , SIB441EDK , SIB452DK , SIB455EDK , SIB456DK , SIB457EDK , IRF4905 , SIB800EDK , SIB911DK , SIB912DK , SIB914DK , SIE726DF , SIE800DF , SIE802DF , SIE804DF .

History: SM6008NF | 2SK1813

Keywords - SIB488DK MOSFET datasheet

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