SIE726DF Datasheet. Specs and Replacement

Type Designator: SIE726DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: POLARPAK

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SIE726DF datasheet

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SIE726DF

New Product SiE726DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package SkyFET Monolithic TrenchFET VDS (V) RDS(on) ( )e Limit Limit Qg (Typ.) Power MOSFET and Schottky Diode Ultra Low Thermal Resistance Using Top- 0.0024 at VGS = 10 V 175 60 ... See More ⇒

Detailed specifications: SIB455EDK, SIB456DK, SIB457EDK, SIB488DK, SIB800EDK, SIB911DK, SIB912DK, SIB914DK, 4435, SIE800DF, SIE802DF, SIE804DF, SIE806DF, SIE808DF, SIE810DF, SIE812DF, SIE816DF

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