All MOSFET. SIE726DF Datasheet

 

SIE726DF Datasheet and Replacement


   Type Designator: SIE726DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: POLARPAK
 

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SIE726DF Datasheet (PDF)

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SIE726DF

New ProductSiE726DFVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)aDefinitionSilicon Package SkyFET Monolithic TrenchFET VDS (V)RDS(on) ()e Limit Limit Qg (Typ.)Power MOSFET and Schottky Diode Ultra Low Thermal Resistance Using Top-0.0024 at VGS = 10 V 17560

Datasheet: SIB455EDK , SIB456DK , SIB457EDK , SIB488DK , SIB800EDK , SIB911DK , SIB912DK , SIB914DK , 2SK3568 , SIE800DF , SIE802DF , SIE804DF , SIE806DF , SIE808DF , SIE810DF , SIE812DF , SIE816DF .

History: STV200N55F3 | P2610BT | DMN3035LWN | NCE50NF600K | DMN65D8LW | IPB34CN10N | FQD2N50TF

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