All MOSFET. SIE820DF Datasheet

 

SIE820DF Datasheet and Replacement


   Type Designator: SIE820DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: POLARPAK
 

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SIE820DF Datasheet (PDF)

 ..1. Size:173K  vishay
 sie820df.pdf pdf_icon

SIE820DF

SiE820DFVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)aDefinitionSilicon Package Extremely Low Qgd WFET Technology forVDS (V) RDS(on) () Qg (Typ.)Limit LimitLow Switching Losses0.0035 at VGS = 4.5 V 136 TrenchFET Power MOSFET5020 43 nC Ultra Low Thermal Resistance Using Top-0

 9.1. Size:173K  vishay
 sie822df.pdf pdf_icon

SIE820DF

SiE822DFVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)aDefinitionSilicon Package TrenchFET Power MOSFETVDS (V) RDS(on) () Qg (Typ.)Limit Limit Ultra Low Thermal Resistance Using Top-0.0034 at VGS = 10 V 138 Exposed PolarPAK Package for Double-5020 24 nCSided Cooling0.0055 at V

Datasheet: SIE802DF , SIE804DF , SIE806DF , SIE808DF , SIE810DF , SIE812DF , SIE816DF , SIE818DF , AON7506 , SIE822DF , SIE830DF , SIE832DF , SIE836DF , SIE844DF , SIE848DF , SIE854DF , SIE860DF .

History: SIE836DF | 12N65KG-TA

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