SIE822DF Datasheet. Specs and Replacement

Type Designator: SIE822DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 220 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: POLARPAK

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SIE822DF datasheet

 ..1. Size:173K  vishay
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SIE822DF

SiE822DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit Ultra Low Thermal Resistance Using Top- 0.0034 at VGS = 10 V 138 Exposed PolarPAK Package for Double- 50 20 24 nC Sided Cooling 0.0055 at V... See More ⇒

 9.1. Size:173K  vishay
 sie820df.pdf pdf_icon

SIE822DF

SiE820DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package Extremely Low Qgd WFET Technology for VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit Low Switching Losses 0.0035 at VGS = 4.5 V 136 TrenchFET Power MOSFET 50 20 43 nC Ultra Low Thermal Resistance Using Top- 0... See More ⇒

Detailed specifications: SIE804DF, SIE806DF, SIE808DF, SIE810DF, SIE812DF, SIE816DF, SIE818DF, SIE820DF, IRF530, SIE830DF, SIE832DF, SIE836DF, SIE844DF, SIE848DF, SIE854DF, SIE860DF, SIE862DF

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