All MOSFET. SIE844DF Datasheet

 

SIE844DF Datasheet and Replacement


   Type Designator: SIE844DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: POLARPAK
 

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SIE844DF Datasheet (PDF)

 ..1. Size:203K  vishay
 sie844df.pdf pdf_icon

SIE844DF

New ProductSiE844DFVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.007 at VGS = 10 V 44.5 TrenchFET Gen II Power MOSFET30 13.1 nC Ultra Low Thermal Resistance Using Top-0.010 at VGS = 4.5 V 37.3Exposed PolarPAK Package for Double-Sided Coo

 9.1. Size:203K  vishay
 sie848df.pdf pdf_icon

SIE844DF

New ProductSiE848DFVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)aDefinitionSilicon Package TrenchFET Gen III Power MOSFETVDS (V) RDS(on) ()e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Package for Double-0.0016 at VGS = 10 V 211 6030 43 nCSided

Datasheet: SIE812DF , SIE816DF , SIE818DF , SIE820DF , SIE822DF , SIE830DF , SIE832DF , SIE836DF , 20N50 , SIE848DF , SIE854DF , SIE860DF , SIE862DF , SIE864DF , SIE868DF , SIE874DF , SIE876DF .

History: SM6008NF | 2SK1813

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