SIE854DF Datasheet. Specs and Replacement

Type Designator: SIE854DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0142 Ohm

Package: POLARPAK

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SIE854DF datasheet

 ..1. Size:187K  vishay
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SIE854DF

SiE854DF Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A) Definition Silicon Package TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit Ultra Low Thermal Resistance Using Top- 0.0142 at VGS = 10 V 100 64 60a 50 nC Exposed PolarPAK Package for Double- Sided Cooling Leadf... See More ⇒

 9.1. Size:117K  vishay
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SIE854DF

SiE850DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A) Definition Silicon Package TrenchFET Gen II Power MOSFET VDS (V) RDS(on) ( )e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top- 0.0025 at VGS = 10 V Exposed PolarPAK Package for Double- 164 60a 30 55 nC Sided Cooling 0.00... See More ⇒

Detailed specifications: SIE818DF, SIE820DF, SIE822DF, SIE830DF, SIE832DF, SIE836DF, SIE844DF, SIE848DF, TK10A60D, SIE860DF, SIE862DF, SIE864DF, SIE868DF, SIE874DF, SIE876DF, SIE878DF, SIE882DF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.