All MOSFET. SIE854DF Datasheet

 

SIE854DF Datasheet and Replacement


   Type Designator: SIE854DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0142 Ohm
   Package: POLARPAK
 

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SIE854DF Datasheet (PDF)

 ..1. Size:187K  vishay
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SIE854DF

SiE854DFVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)DefinitionSilicon Package TrenchFET Power MOSFETVDS (V) RDS(on) () Qg (Typ.)Limit Limit Ultra Low Thermal Resistance Using Top-0.0142 at VGS = 10 V 100 6460a 50 nC Exposed PolarPAK Package for Double-Sided Cooling Leadf

 9.1. Size:117K  vishay
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SIE854DF

SiE850DFVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)DefinitionSilicon Package TrenchFET Gen II Power MOSFETVDS (V) RDS(on) ()e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top-0.0025 at VGS = 10 V Exposed PolarPAK Package for Double-16460a30 55 nCSided Cooling0.00

Datasheet: SIE818DF , SIE820DF , SIE822DF , SIE830DF , SIE832DF , SIE836DF , SIE844DF , SIE848DF , IRFZ24N , SIE860DF , SIE862DF , SIE864DF , SIE868DF , SIE874DF , SIE876DF , SIE878DF , SIE882DF .

History: SI8429DB | NX6020CAKS | IXTA98N075T | SI7462DP | DMHC10H170SFJ | AP3N2R4MT | 4N65L-TQ2-T

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