SIE882DF Datasheet and Replacement
Type Designator: SIE882DF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 1400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: POLARPAK
SIE882DF substitution
SIE882DF Datasheet (PDF)
sie882df.pdf

New ProductSiE882DFVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)aDefinitionSilicon Package TrenchFET Gen III Power MOSFETVDS (V) RDS(on) () Qg (Typ.)Limit Limit Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Package for 0.0014 at VGS = 10 V 229 6025 46 nCDouble-Sided
Datasheet: SIE854DF , SIE860DF , SIE862DF , SIE864DF , SIE868DF , SIE874DF , SIE876DF , SIE878DF , 13N50 , SIHA12N50E , SIHA12N60E , SIHA15N50E , SIHA15N60E , SIHA20N50E , SIHA22N60E , SIHA25N50E , SIHB10N40D .
History: HM70P03K | DMN2501UFB4 | CS12N60A8H | IXFE180N10 | S70N08ZRP | DMP2066LDM | IRFSL5620PBF
Keywords - SIE882DF MOSFET datasheet
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History: HM70P03K | DMN2501UFB4 | CS12N60A8H | IXFE180N10 | S70N08ZRP | DMP2066LDM | IRFSL5620PBF



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