SIE882DF Datasheet. Specs and Replacement

Type Designator: SIE882DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: POLARPAK

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SIE882DF datasheet

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SIE882DF

New Product SiE882DF Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package TrenchFET Gen III Power MOSFET VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Package for 0.0014 at VGS = 10 V 229 60 25 46 nC Double-Sided... See More ⇒

Detailed specifications: SIE854DF, SIE860DF, SIE862DF, SIE864DF, SIE868DF, SIE874DF, SIE876DF, SIE878DF, 5N60, SIHA12N50E, SIHA12N60E, SIHA15N50E, SIHA15N60E, SIHA20N50E, SIHA22N60E, SIHA25N50E, SIHB10N40D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.