All MOSFET. SIHD6N62E Datasheet

 

SIHD6N62E MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHD6N62E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 78 W

Maximum Drain-Source Voltage |Vds|: 620 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 36 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO-252

SIHD6N62E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHD6N62E Datasheet (PDF)

1.1. sihd6n62e.pdf Size:233K _upd-mosfet

SIHD6N62E
SIHD6N62E

SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.9 • Reduced switching and conduction losses Qg max. (nC) 34 • Ultra low gate charge (Qg) Qgs (nC) 4 • Avalanche energy rated (UIS) Qgd (nC) 8 • Mate

3.1. sihd6n65e.pdf Size:195K _upd-mosfet

SIHD6N62E
SIHD6N62E

SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 • Reduced switching and conduction losses Qg max. (nC) 48 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 11 • Mat

 

Datasheet: SIHB33N60E , SIHB33N60EF , SIHB6N65E , SIHB8N50D , SIHD12N50E , SIHD3N50D , SIHD3N50DA , SIHD5N50D , 2SK1058 , SIHD6N65E , SIHD7N60E , SIHF10N40D , SIHF12N50C , SIHF12N60E , SIHF12N65E , SIHF15N60E , SIHF15N65E .

Back to Top

 


SIHD6N62E
  SIHD6N62E
  SIHD6N62E
 

social 

LIST

Last Update

MOSFET: SSW4N60B | SSW2N60B | SSU2N60B | SSU1N60B | SSU1N45 | SSTSD203 | SSTSD201 | SST4416 | SST441 | SST440 | SST4393 | SST4392 | SST4391 | SST177 | SST176 |

 

 

Back to Top