All MOSFET. SIHD6N62E Datasheet

 

SIHD6N62E MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHD6N62E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 78 W

Maximum Drain-Source Voltage |Vds|: 620 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 36 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO-252

SIHD6N62E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHD6N62E Datasheet (PDF)

1.1. sihd6n62e.pdf Size:233K _upd-mosfet

SIHD6N62E
SIHD6N62E

SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.9 • Reduced switching and conduction losses Qg max. (nC) 34 • Ultra low gate charge (Qg) Qgs (nC) 4 • Avalanche energy rated (UIS) Qgd (nC) 8 • Mate

3.1. sihd6n65e.pdf Size:195K _upd-mosfet

SIHD6N62E
SIHD6N62E

SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 • Reduced switching and conduction losses Qg max. (nC) 48 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 11 • Mat

 

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