All MOSFET. SIHD6N62E Datasheet

 

SIHD6N62E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIHD6N62E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 620 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-252

 SIHD6N62E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHD6N62E Datasheet (PDF)

 ..1. Size:233K  vishay
 sihd6n62e.pdf

SIHD6N62E SIHD6N62E

SiHD6N62Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC) 34 Ultra low gate charge (Qg)Qgs (nC) 4 Avalanche energy rated (UIS)Qgd (nC) 8 Mate

 7.1. Size:195K  vishay
 sihd6n65e.pdf

SIHD6N62E SIHD6N62E

SiHD6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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