SIHD6N62E Datasheet. Specs and Replacement

Type Designator: SIHD6N62E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 620 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-252

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SIHD6N62E datasheet

 ..1. Size:233K  vishay
 sihd6n62e.pdf pdf_icon

SIHD6N62E

SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 34 Ultra low gate charge (Qg) Qgs (nC) 4 Avalanche energy rated (UIS) Qgd (nC) 8 Mate... See More ⇒

 7.1. Size:195K  vishay
 sihd6n65e.pdf pdf_icon

SIHD6N62E

SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced switching and conduction losses Qg max. (nC) 48 Ultra low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 11 Mat... See More ⇒

Detailed specifications: SIHB33N60E, SIHB33N60EF, SIHB6N65E, SIHB8N50D, SIHD12N50E, SIHD3N50D, SIHD3N50DA, SIHD5N50D, AON6426, SIHD6N65E, SIHD7N60E, SIHF10N40D, SIHF12N50C, SIHF12N60E, SIHF12N65E, SIHF15N60E, SIHF15N65E

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