SIHD6N62E PDF Specs and Replacement
Type Designator: SIHD6N62E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 620 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 36 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-252
SIHD6N62E substitution
SIHD6N62E PDF Specs
sihd6n62e.pdf
SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 34 Ultra low gate charge (Qg) Qgs (nC) 4 Avalanche energy rated (UIS) Qgd (nC) 8 Mate... See More ⇒
sihd6n65e.pdf
SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced switching and conduction losses Qg max. (nC) 48 Ultra low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 11 Mat... See More ⇒
Detailed specifications: SIHB33N60E , SIHB33N60EF , SIHB6N65E , SIHB8N50D , SIHD12N50E , SIHD3N50D , SIHD3N50DA , SIHD5N50D , IRFP064N , SIHD6N65E , SIHD7N60E , SIHF10N40D , SIHF12N50C , SIHF12N60E , SIHF12N65E , SIHF15N60E , SIHF15N65E .
Keywords - SIHD6N62E MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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