All MOSFET. IRF7410PBF Datasheet

 

IRF7410PBF Datasheet and Replacement


   Type Designator: IRF7410PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 91 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 2344 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SO-8
 

 IRF7410PBF substitution

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IRF7410PBF Datasheet (PDF)

 ..1. Size:210K  international rectifier
 irf7410pbf.pdf pdf_icon

IRF7410PBF

PD - 96028BIRF7410PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 7m@VGS = -4.5V -16Al Surface Mount9m@VGS = -2.5V -13.6Al Available in Tape & Reel13m@VGS = -1.8V -11.5Al Lead-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques

 0.1. Size:195K  international rectifier
 irf7410pbf-1.pdf pdf_icon

IRF7410PBF

IRF7410TRPbF-1HEXFET Power MOSFETVDS -12 VA1 8S DRDS(on) max 72 7(@V = -4.5V) DGS SRDS(on) max 3 6S9 m D(@V = -2.5V)GS4 5G DRDS(on) max 13(@V = -1.8V)GSSO-8Top ViewQg (typical) 91 nCID -16 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount T

 7.1. Size:208K  international rectifier
 irf7410gpbf.pdf pdf_icon

IRF7410PBF

PD - 96247IRF7410GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 7m@VGS = -4.5V -16Al Surface Mount9m@VGS = -2.5V -13.6Al Available in Tape & Reel13m@VGS = -1.8V -11.5Al Lead-Freel Halogen-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing

 7.2. Size:102K  international rectifier
 irf7410.pdf pdf_icon

IRF7410PBF

PD - 94025IRF7410HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 7m@VGS = -4.5V -16A Surface Mount9m@VGS = -2.5V -13.6A Available in Tape & Reel13m@VGS = -1.8V -11.5ADescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques to achieve the extrem

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Datasheet: IRF740ASPBF , IRF740B , IRF740LC , IRF740LCPBF , IRF740PBF , IRF740SPBF , IRF7410GPBF , IRF7410PBF-1 , 7N65 , IRF7413GPBF , IRF7413PBF , IRF7413PBF-1 , IRF7413QPBF , IRF7413ZGPBF , IRF7413ZPBF , IRF7416GPBF , IRF7416PBF .

History: AP0704GMT-HF

Keywords - IRF7410PBF MOSFET datasheet

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