SIHF30N60E Datasheet. Specs and Replacement

Type Designator: SIHF30N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-220FP

SIHF30N60E substitution

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SIHF30N60E datasheet

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SIHF30N60E

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Detailed specifications: IRF7534D1, IRF7534D1PBF, IRF7580M, IRF7601PBF, IRF7603PBF, SIHF22N65E, SIHF23N60E, SIHF28N60EF, IRFB4110, SIHF510, SIHF510S, SIHF520, SIHF520S, SIHF530, SIHF530S, SIHF540, SIHF540S

Keywords - SIHF30N60E MOSFET specs

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