All MOSFET. SIHF30N60E Datasheet

 

SIHF30N60E Datasheet and Replacement


   Type Designator: SIHF30N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 138 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-220FP
 

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SIHF30N60E Datasheet (PDF)

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SIHF30N60E

SiHF30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39

Datasheet: IRF7534D1 , IRF7534D1PBF , IRF7580M , IRF7601PBF , IRF7603PBF , SIHF22N65E , SIHF23N60E , SIHF28N60EF , IRF640N , SIHF510 , SIHF510S , SIHF520 , SIHF520S , SIHF530 , SIHF530S , SIHF540 , SIHF540S .

History: 2SK2541

Keywords - SIHF30N60E MOSFET datasheet

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