All MOSFET. SIHF9Z24S Datasheet

 

SIHF9Z24S Datasheet and Replacement


   Type Designator: SIHF9Z24S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-263
 

 SIHF9Z24S substitution

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SIHF9Z24S Datasheet (PDF)

 ..1. Size:167K  vishay
 irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf pdf_icon

SIHF9Z24S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

 ..2. Size:193K  vishay
 irf9z24spbf sihf9z24l sihf9z24s.pdf pdf_icon

SIHF9Z24S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

 6.1. Size:196K  vishay
 irf9z24 sihf9z24.pdf pdf_icon

SIHF9Z24S

IRF9Z24, SiHF9Z24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 19 175 C Operating TemperatureQgs (nC) 5.4 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive Require

 6.2. Size:197K  vishay
 irf9z24pbf sihf9z24.pdf pdf_icon

SIHF9Z24S

IRF9Z24, SiHF9Z24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 19 175 C Operating TemperatureQgs (nC) 5.4 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive Require

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Datasheet: SIHF9Z10 , SIHF9Z14 , SIHF9Z14L , SIHF9Z14S , SIHF9Z20 , SIHF9Z22 , SIHF9Z24 , SIHF9Z24L , IRF640 , SIHF9Z30 , SIHF9Z34 , SIHF9Z34L , SIHF9Z34S , SIHFB13N50A , SIHFB17N50L , SIHFB9N60A , SIHFB9N65A .

History: SFF10N100 | BLP06N08G-B

Keywords - SIHF9Z24S MOSFET datasheet

 SIHF9Z24S cross reference
 SIHF9Z24S equivalent finder
 SIHF9Z24S lookup
 SIHF9Z24S substitution
 SIHF9Z24S replacement

 

 
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