Справочник MOSFET. SIHF9Z24S

 

SIHF9Z24S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHF9Z24S
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 60 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 11 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 19 nC
   Время нарастания (tr): 68 ns
   Выходная емкость (Cd): 360 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.28 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SIHF9Z24S

 

 

SIHF9Z24S Datasheet (PDF)

 ..1. Size:167K  vishay
 irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf

SIHF9Z24S SIHF9Z24S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

 ..2. Size:193K  vishay
 irf9z24spbf sihf9z24l sihf9z24s.pdf

SIHF9Z24S SIHF9Z24S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

 6.1. Size:196K  vishay
 irf9z24 sihf9z24.pdf

SIHF9Z24S SIHF9Z24S

IRF9Z24, SiHF9Z24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 19 175 C Operating TemperatureQgs (nC) 5.4 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive Require

 6.2. Size:197K  vishay
 irf9z24pbf sihf9z24.pdf

SIHF9Z24S SIHF9Z24S

IRF9Z24, SiHF9Z24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 19 175 C Operating TemperatureQgs (nC) 5.4 Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Single Simple Drive Require

 7.1. Size:1161K  vishay
 sihf9z22.pdf

SIHF9Z24S SIHF9Z24S

IRF9Z22, SiHF9Z22Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.33RoHS* Fast Switching Qg (Max.) (nC) 26 COMPLIANT Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature StabilityConfiguration SingleDESCRIPTIONS

 7.2. Size:1215K  vishay
 irf9z20pbf sihf9z20.pdf

SIHF9Z24S SIHF9Z24S

IRF9Z20, SiHF9Z20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.28RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 26 Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/

 7.3. Size:1213K  vishay
 irf9z20 sihf9z20.pdf

SIHF9Z24S SIHF9Z24S

IRF9Z20, SiHF9Z20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY P-Channel VersatilityVDS (V) - 50Available Compact Plastic PackageRDS(on) ()VGS = - 10 V 0.28RoHS* Fast SwitchingCOMPLIANTQg (Max.) (nC) 26 Low Drive CurrentQgs (nC) 6.2 Ease of ParallelingQgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top