SIHFI614G Datasheet. Specs and Replacement
Type Designator: SIHFI614G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ -
Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-220FP
- MOSFET ⓘ Cross-Reference Search
SIHFI614G datasheet
..1. Size:954K vishay
sihfi614g.pdf 
IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 8.2 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Low Thermal Resistance Configuration ... See More ⇒
..2. Size:953K vishay
irfi614g sihfi614g.pdf
IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 8.2 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 1.8 Dynamic dV/dt Rating Qgd (nC) 4.5 Low Thermal Resistance Configuration ... See More ⇒
8.1. Size:1751K vishay
irfi620g sihfi620g.pdf
IRFI620G, SiHFI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.80 f = 60 Hz) RoHS* Qg (Max.) (nC) 14 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 7.9 Low Thermal Resistance Configuration S... See More ⇒
8.2. Size:1398K vishay
irfi644g sihfi644g.pdf
IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si... See More ⇒
8.3. Size:1541K vishay
irfi630g sihfi630g.pdf
IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S... See More ⇒
8.4. Size:1399K vishay
sihfi644g.pdf
IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.28 f = 60 Hz) RoHS* Qg (Max.) (nC) 68 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 35 Low Thermal Resistance Configuration Si... See More ⇒
8.5. Size:1753K vishay
sihfi620g.pdf
IRFI620G, SiHFI620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.80 f = 60 Hz) RoHS* Qg (Max.) (nC) 14 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 7.9 Low Thermal Resistance Configuration S... See More ⇒
8.6. Size:1801K vishay
sihfi640g.pdf
IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr... See More ⇒
8.7. Size:1799K vishay
irfi640g sihfi640g.pdf
IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.18 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 70 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 13 Low Thermal Resistance Qgd (nC) 39 Lead (Pb)-fr... See More ⇒
8.8. Size:1107K vishay
sihfi634g.pdf
IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.45 f = 60 Hz) RoHS* Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal Resistance Qgd (nC) 22 Lead (Pb)-fre... See More ⇒
8.9. Size:1543K vishay
sihfi630g.pdf
IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S... See More ⇒
8.10. Size:1106K vishay
irfi634g sihfi634g.pdf
IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 250 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.45 f = 60 Hz) RoHS* Qg (Max.) (nC) 41 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 6.5 Dynamic dV/dt Rating Low Thermal Resistance Qgd (nC) 22 Lead (Pb)-fre... See More ⇒
Detailed specifications: SIHFD9120, SIHFD9210, SIHFD9220, SIHFDC20, SIHFI510G, SIHFI520G, SIHFI530G, SIHFI540G, 18N50, SIHFI620G, SIHFI630G, SIHFI634G, SIHFI640G, SIHFI644G, SIHFI720G, SIHFI730G, SIHFI740G
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