All MOSFET. SIHFI614G Datasheet

 

SIHFI614G Datasheet and Replacement


   Type Designator: SIHFI614G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-220FP
 

 SIHFI614G substitution

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SIHFI614G Datasheet (PDF)

 ..1. Size:954K  vishay
 sihfi614g.pdf pdf_icon

SIHFI614G

IRFI614G, SiHFI614GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.0f = 60 Hz)RoHS*Qg (Max.) (nC) 8.2COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Low Thermal ResistanceConfiguration

 ..2. Size:953K  vishay
 irfi614g sihfi614g.pdf pdf_icon

SIHFI614G

IRFI614G, SiHFI614GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.0f = 60 Hz)RoHS*Qg (Max.) (nC) 8.2COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Low Thermal ResistanceConfiguration

 8.1. Size:1751K  vishay
 irfi620g sihfi620g.pdf pdf_icon

SIHFI614G

IRFI620G, SiHFI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.80f = 60 Hz) RoHS*Qg (Max.) (nC) 14COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 7.9 Low Thermal ResistanceConfiguration S

 8.2. Size:1398K  vishay
 irfi644g sihfi644g.pdf pdf_icon

SIHFI614G

IRFI644G, SiHFI644GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 250Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.28f = 60 Hz)RoHS*Qg (Max.) (nC) 68COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 35 Low Thermal ResistanceConfiguration Si

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Datasheet: SIHFD9120 , SIHFD9210 , SIHFD9220 , SIHFDC20 , SIHFI510G , SIHFI520G , SIHFI530G , SIHFI540G , 75N75 , SIHFI620G , SIHFI630G , SIHFI634G , SIHFI640G , SIHFI644G , SIHFI720G , SIHFI730G , SIHFI740G .

History: 19N10L-T3P-T | 14N50L-TA3-T | 14N50G-TF1-T | NCEAP023N10LL | CEN2321A | BRCS120P012MC | IXFT23N80Q

Keywords - SIHFI614G MOSFET datasheet

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