All MOSFET. SIHFI9520G Datasheet

 

SIHFI9520G Datasheet and Replacement


   Type Designator: SIHFI9520G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-220FP
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SIHFI9520G Datasheet (PDF)

 ..1. Size:1446K  vishay
 irfi9520g sihfi9520g.pdf pdf_icon

SIHFI9520G

IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration

 ..2. Size:1448K  vishay
 irfi9520g irfi9520gpbf sihfi9520g.pdf pdf_icon

SIHFI9520G

IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration

 7.1. Size:1458K  vishay
 irfi9530g sihfi9530g.pdf pdf_icon

SIHFI9520G

IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/

 7.2. Size:944K  vishay
 irfi9540g-pbf sihfi9540g.pdf pdf_icon

SIHFI9520G

IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt

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History: NCEP18N10AG | IRHG6110 | SH8J65 | FQB9P25TM | AONS66620 | HX3415A | SVS70R420SE3TR

Keywords - SIHFI9520G MOSFET datasheet

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