All MOSFET. SIHFI9520G Datasheet

 

SIHFI9520G MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHFI9520G

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 37 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.2 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 18 nC

Rise Time (tr): 29 nS

Drain-Source Capacitance (Cd): 170 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO-220FP

SIHFI9520G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHFI9520G Datasheet (PDF)

1.1. sihfi9520g.pdf Size:1448K _upd-mosfet

SIHFI9520G
SIHFI9520G

IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) - 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (Ω)VGS = - 10 V 0.60 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 3.0 • P-Channel Qgd (nC) 9.0 • 175 °C Operating Temperature Configuration

1.2. irfi9520g sihfi9520g.pdf Size:1446K _vishay

SIHFI9520G
SIHFI9520G

IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (?)VGS = - 10 V 0.60 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Configuration Single Dyna

 3.1. sihfi9540g.pdf Size:944K _upd-mosfet

SIHFI9520G
SIHFI9520G

IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) - 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (Ω)VGS = - 10 V 0.20 RoHS* • Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT • P-Channel Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Dynamic dV/dt

3.2. sihfi9530g.pdf Size:1460K _upd-mosfet

SIHFI9520G
SIHFI9520G

IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) - 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (Ω)VGS = - 10 V 0.30 RoHS* • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 38 COMPLIANT • P-Channel Qgs (nC) 6.8 • 175 °C Operating Temperature Qgd (nC) 21 • Dynamic dV/

 3.3. irfi9540g sihfi9540g.pdf Size:943K _vishay

SIHFI9520G
SIHFI9520G

IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (?)VGS = - 10 V 0.20 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT P-Channel Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Dynamic dV/dt Configuration Si

3.4. irfi9530g sihfi9530g.pdf Size:1458K _vishay

SIHFI9520G
SIHFI9520G

IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (?)VGS = - 10 V 0.30 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 38 COMPLIANT P-Channel Qgs (nC) 6.8 175 C Operating Temperature Qgd (nC) 21 Dynamic dV/dt Rating Config

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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