SIHFI9620G Datasheet. Specs and Replacement

Type Designator: SIHFI9620G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220FP

SIHFI9620G substitution

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SIHFI9620G datasheet

 ..1. Size:1647K  vishay
 irfi9620gpbf sihfi9620g.pdf pdf_icon

SIHFI9620G

IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = - 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 15 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Qgd (nC) 8.4 Low Thermal Resistance Conf... See More ⇒

 ..2. Size:1671K  vishay
 irfi9620g sihfi9620g.pdf pdf_icon

SIHFI9620G

IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = - 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 15 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Qgd (nC) 8.4 Low Thermal Resistance Conf... See More ⇒

 7.1. Size:1655K  vishay
 irfi9640gpbf sihfi9640g.pdf pdf_icon

SIHFI9620G

IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.50 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 44 COMPLIANT P-Channel Qgs (nC) 7.1 Dynamic dV/dt Rating Qgd (nC) 27 Low Thermal Resist... See More ⇒

 7.2. Size:814K  vishay
 irfi9610g sihfi9610g.pdf pdf_icon

SIHFI9620G

IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 3.0 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 13 P-Channel Qgs (nC) 3.2 Dynamic dV/dt Rating Qgd (nC) 7.3 Low Thermal Resista... See More ⇒

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Detailed specifications: SIHFI820G, SIHFI830G, SIHFI840G, SIHFI840GLC, SIHFI9520G, SIHFI9530G, SIHFI9540G, SIHFI9610G, IRLB3034, SIHFI9630G, SIHFI9634G, SIHFI9640G, SIHFI9Z14G, SIHFI9Z24G, SIHFI9Z34G, SIHFIB5N65A, SIHFIB6N60A

Keywords - SIHFI9620G MOSFET specs

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