IRL5602S Spec and Replacement
Type Designator: IRL5602S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO263
IRL5602S substitution
IRL5602S Specs
irl5602spbf.pdf
PD- 95099 IRL5602SPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -20V l 175 C Operating Temperature l P-Channel RDS(on) = 0.042 l Fast Switching G l Fully Avalanche Rated ID = -24A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist... See More ⇒
irl5602s.pdf
PD- 91888 IRL5602S HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -20V l 175 C Operating Temperature l P-Channel RDS(on) = 0.042W l Fast Switching G l Fully Avalanche Rated ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒
Detailed specifications: IRL530NS , IRL531 , IRL540 , IRL540A , IRL540N , IRL540NL , IRL540NS , IRL541 , IRF520 , IRL610 , IRL610A , IRL611 , IRL620 , IRL620A , IRL620S , IRL621 , IRL630 .
History: IRL620A
Keywords - IRL5602S MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRL620A
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