IRL5602S MOSFET Datasheet: P-Ch, 20V, 24A. Full specification with pinout and replacement list

IRL5602S Specs and Replacement

Type Designator: IRL5602S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 790 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO263

IRL5602S substitution

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IRL5602S datasheet

..1. Size:238K international rectifier
irl5602spbf.pdf pdf_icon

PD- 95099 IRL5602SPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -20V l 175 C Operating Temperature l P-Channel RDS(on) = 0.042 l Fast Switching G l Fully Avalanche Rated ID = -24A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist... See More ⇒

..2. Size:171K international rectifier
irl5602s.pdf pdf_icon

PD- 91888 IRL5602S HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -20V l 175 C Operating Temperature l P-Channel RDS(on) = 0.042W l Fast Switching G l Fully Avalanche Rated ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

Detailed specifications: IRL530NS , IRL531 , IRL540 , IRL540A , IRL540N , IRL540NL , IRL540NS , IRL541 , IRF520 , IRL610 , IRL610A , IRL611 , IRL620 , IRL620A , IRL620S , IRL621 , IRL630 .