SIHFIZ24G Datasheet. Specs and Replacement

Type Designator: SIHFIZ24G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-220FP

SIHFIZ24G substitution

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SIHFIZ24G datasheet

 ..1. Size:1554K  vishay
 irfiz24g sihfiz24g.pdf pdf_icon

SIHFIZ24G

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Ther... See More ⇒

 ..2. Size:1555K  vishay
 sihfiz24g.pdf pdf_icon

SIHFIZ24G

IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.10 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.8 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt Rating Low Ther... See More ⇒

 8.1. Size:1392K  vishay
 sihfiz44g.pdf pdf_icon

SIHFIZ24G

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configurat... See More ⇒

 8.2. Size:1000K  vishay
 irfiz14g sihfiz14g.pdf pdf_icon

SIHFIZ24G

IRFIZ14G, SiHFIZ14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.20 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.1 175 C Operating Temperature Qgd (nC) 5.8 Dynamic dv/dt Rating Configur... See More ⇒

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Detailed specifications: SIHFIBC30G, SIHFIBC40G, SIHFIBC40GLC, SIHFIBE20G, SIHFIBE30G, SIHFIBF20G, SIHFIBF30G, SIHFIZ14G, IRF540N, SIHFIZ34G, SIHFIZ44G, SIHFIZ48G, SIHFL014, SIHFL110, SIHFL210, SIHFL214, SIHFL9014

Keywords - SIHFIZ24G MOSFET specs

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