All MOSFET. SIHFP140 Datasheet

 

SIHFP140 MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHFP140

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 72 nC

Rise Time (tr): 44 nS

Drain-Source Capacitance (Cd): 550 pF

Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm

Package: TO-247AC

SIHFP140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHFP140 Datasheet (PDF)

1.1. sihfp140.pdf Size:1758K _upd-mosfet

SIHFP140
SIHFP140

IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.077 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 72 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 11 • Fast Switching Qgd (nC) 32 • Ease of Paralleling Configuration Single • Sim

1.2. irfp140 sihfp140.pdf Size:1752K _vishay

SIHFP140
SIHFP140

IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.077 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Single Simple Drive Requireme

 4.1. sihfp150.pdf Size:1476K _upd-mosfet

SIHFP140
SIHFP140

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.055 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 • 175 °C Operating Temperature COMPLIANT Qgs (nC) 29 • Fast Switching Qgd (nC) 68 • Ease of Paralleling Configuration Single • S

4.2. sihfp17n50l.pdf Size:181K _upd-mosfet

SIHFP140
SIHFP140

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) (Ω)VGS = 10 V 0.28 RoHS* • Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 • Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Rugg

 4.3. irfp150 sihfp150.pdf Size:1470K _vishay

SIHFP140
SIHFP140

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single Simple Drive Require

4.4. irfp17n50l sihfp17n50l.pdf Size:176K _vishay

SIHFP140
SIHFP140

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) (?)VGS = 10 V 0.28 RoHS* Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Ruggedness Co

Datasheet: SIHFL210 , SIHFL214 , SIHFL9014 , SIHFL9110 , SIHFP048 , SIHFP048R , SIHFP054 , SIHFP064 , RFP50N06 , SIHFP150 , SIHFP17N50L , SIHFP21N60L , SIHFP22N50A , SIHFP22N60K , IRF7606PBF , IRF7607PBF , IRF7663PBF .

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