All MOSFET. IRF7E3704 Datasheet

 

IRF7E3704 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7E3704
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1005 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: LCC-18

 IRF7E3704 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7E3704 Datasheet (PDF)

 ..1. Size:124K  international rectifier
 irf7e3704.pdf

IRF7E3704 IRF7E3704

PD - 94678HEXFET POWER MOSFET IRF7E3704SURFACE MOUNT (LCC-18)20V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7E3704 20V 0.05 12A*LCC-18Seventh Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with thefa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFX64N50Q3

 

 
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