IRF7E3704 Datasheet. Specs and Replacement

Type Designator: IRF7E3704

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 1005 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: LCC-18

IRF7E3704 substitution

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IRF7E3704 datasheet

 ..1. Size:124K  international rectifier
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IRF7E3704

PD - 94678 HEXFET POWER MOSFET IRF7E3704 SURFACE MOUNT (LCC-18) 20V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7E3704 20V 0.05 12A* LCC-18 Seventh Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the fa... See More ⇒

Detailed specifications: IRF7902PBF, IRF7904PBF, IRF7904PBF-1, IRF7905PBF, IRF7907PBF, IRF7907PBF-1, IRF7910PBF-1, IRF7946, IRFP460, IRF7F3704, IRF7MS2907, IRF7N1405, IRF7NA2907, IRF7NJZ44V, IRF7Y1405CM, IRF7YSZ44VCM, IRF8010PBF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.