All MOSFET. IRF7E3704 Datasheet

 

IRF7E3704 Datasheet and Replacement


   Type Designator: IRF7E3704
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1005 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: LCC-18
 

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IRF7E3704 Datasheet (PDF)

 ..1. Size:124K  international rectifier
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IRF7E3704

PD - 94678HEXFET POWER MOSFET IRF7E3704SURFACE MOUNT (LCC-18)20V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7E3704 20V 0.05 12A*LCC-18Seventh Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with thefa

Datasheet: IRF7902PBF , IRF7904PBF , IRF7904PBF-1 , IRF7905PBF , IRF7907PBF , IRF7907PBF-1 , IRF7910PBF-1 , IRF7946 , IRF640 , IRF7F3704 , IRF7MS2907 , IRF7N1405 , IRF7NA2907 , IRF7NJZ44V , IRF7Y1405CM , IRF7YSZ44VCM , IRF8010PBF .

History: RJK1008DPP | RS1G260MN | HGS085N10SL | AP99T06GP-HF | GP1M009A020XX | HGK020NE4S | SSM4K27CT

Keywords - IRF7E3704 MOSFET datasheet

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