IRF7F3704 Datasheet. Specs and Replacement

Type Designator: IRF7F3704

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 175 nS

Cossⓘ - Output Capacitance: 990 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-39

IRF7F3704 substitution

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IRF7F3704 datasheet

 ..1. Size:177K  international rectifier
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IRF7F3704

PD-94340B HEXFET POWER MOSFET IRF7F3704 THRU-HOLE (TO-39) 20V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7F3704 20V 0.035 12A* Seventh Generation HEXFET power MOSFETs from TO-39 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fast swi... See More ⇒

Detailed specifications: IRF7904PBF, IRF7904PBF-1, IRF7905PBF, IRF7907PBF, IRF7907PBF-1, IRF7910PBF-1, IRF7946, IRF7E3704, IRFZ44, IRF7MS2907, IRF7N1405, IRF7NA2907, IRF7NJZ44V, IRF7Y1405CM, IRF7YSZ44VCM, IRF8010PBF, IRF8010SPBF

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