IRF7F3704 Datasheet and Replacement
Type Designator: IRF7F3704
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 175 nS
Cossⓘ - Output Capacitance: 990 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-39
IRF7F3704 substitution
IRF7F3704 Datasheet (PDF)
irf7f3704.pdf

PD-94340BHEXFET POWER MOSFET IRF7F3704THRU-HOLE (TO-39)20V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7F3704 20V 0.035 12A*Seventh Generation HEXFET power MOSFETs fromTO-39International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast swi
Datasheet: IRF7904PBF , IRF7904PBF-1 , IRF7905PBF , IRF7907PBF , IRF7907PBF-1 , IRF7910PBF-1 , IRF7946 , IRF7E3704 , IRFZ44 , IRF7MS2907 , IRF7N1405 , IRF7NA2907 , IRF7NJZ44V , IRF7Y1405CM , IRF7YSZ44VCM , IRF8010PBF , IRF8010SPBF .
History: SFF450M | CS4N60P | IPD053N06N3G
Keywords - IRF7F3704 MOSFET datasheet
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History: SFF450M | CS4N60P | IPD053N06N3G



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