All MOSFET. IRF7F3704 Datasheet

 

IRF7F3704 Datasheet and Replacement


   Type Designator: IRF7F3704
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 175 nS
   Cossⓘ - Output Capacitance: 990 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-39
 

 IRF7F3704 substitution

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IRF7F3704 Datasheet (PDF)

 ..1. Size:177K  international rectifier
 irf7f3704.pdf pdf_icon

IRF7F3704

PD-94340BHEXFET POWER MOSFET IRF7F3704THRU-HOLE (TO-39)20V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7F3704 20V 0.035 12A*Seventh Generation HEXFET power MOSFETs fromTO-39International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast swi

Datasheet: IRF7904PBF , IRF7904PBF-1 , IRF7905PBF , IRF7907PBF , IRF7907PBF-1 , IRF7910PBF-1 , IRF7946 , IRF7E3704 , IRFZ44 , IRF7MS2907 , IRF7N1405 , IRF7NA2907 , IRF7NJZ44V , IRF7Y1405CM , IRF7YSZ44VCM , IRF8010PBF , IRF8010SPBF .

History: DACMI150N120BZK3 | STW15N80K5 | 2SJ119 | TPW60R090MFD | MMN8205

Keywords - IRF7F3704 MOSFET datasheet

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