All MOSFET. IRF7MS2907 Datasheet

 

IRF7MS2907 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7MS2907
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 375 nC
   trⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 2280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-254AA

 IRF7MS2907 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7MS2907 Datasheet (PDF)

 ..1. Size:133K  international rectifier
 irf7ms2907.pdf

IRF7MS2907 IRF7MS2907

PD - 94609HEXFET POWER MOSFET IRF7MS2907THRU-HOLE (Low-ohmic TO-254AA)75V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7MS2907 75V 0.0055 45A*Low-OhmicSeventh Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benef

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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