IRF7MS2907 Datasheet. Specs and Replacement

Type Designator: IRF7MS2907

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 135 nS

Cossⓘ - Output Capacitance: 2280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-254AA

IRF7MS2907 substitution

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IRF7MS2907 datasheet

 ..1. Size:133K  international rectifier
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IRF7MS2907

PD - 94609 HEXFET POWER MOSFET IRF7MS2907 THRU-HOLE (Low-ohmic TO-254AA) 75V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7MS2907 75V 0.0055 45A* Low-Ohmic Seventh Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benef... See More ⇒

Detailed specifications: IRF7904PBF-1, IRF7905PBF, IRF7907PBF, IRF7907PBF-1, IRF7910PBF-1, IRF7946, IRF7E3704, IRF7F3704, IRF640, IRF7N1405, IRF7NA2907, IRF7NJZ44V, IRF7Y1405CM, IRF7YSZ44VCM, IRF8010PBF, IRF8010SPBF, IRF8113GPBF

Keywords - IRF7MS2907 MOSFET specs

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