All MOSFET. IRF7MS2907 Datasheet

 

IRF7MS2907 Datasheet and Replacement


   Type Designator: IRF7MS2907
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 135 nS
   Cossⓘ - Output Capacitance: 2280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-254AA
 

 IRF7MS2907 substitution

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IRF7MS2907 Datasheet (PDF)

 ..1. Size:133K  international rectifier
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IRF7MS2907

PD - 94609HEXFET POWER MOSFET IRF7MS2907THRU-HOLE (Low-ohmic TO-254AA)75V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7MS2907 75V 0.0055 45A*Low-OhmicSeventh Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benef

Datasheet: IRF7904PBF-1 , IRF7905PBF , IRF7907PBF , IRF7907PBF-1 , IRF7910PBF-1 , IRF7946 , IRF7E3704 , IRF7F3704 , IRF640 , IRF7N1405 , IRF7NA2907 , IRF7NJZ44V , IRF7Y1405CM , IRF7YSZ44VCM , IRF8010PBF , IRF8010SPBF , IRF8113GPBF .

History: HAT2266H

Keywords - IRF7MS2907 MOSFET datasheet

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