All MOSFET. IRF7Y1405CM Datasheet

 

IRF7Y1405CM Datasheet and Replacement


   Type Designator: IRF7Y1405CM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0153 Ohm
   Package: TO-257AA
 

 IRF7Y1405CM substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRF7Y1405CM Datasheet (PDF)

 ..1. Size:93K  international rectifier
 irf7y1405cm.pdf pdf_icon

IRF7Y1405CM

PD - 94449HEXFET POWER MOSFET IRF7Y1405CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7Y1405CM 55V 0.0153 18A*Seventh Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t

 9.1. Size:110K  international rectifier
 irf7ysz44vcm.pdf pdf_icon

IRF7Y1405CM

PD - 94603HEXFET POWER MOSFET IRF7YSZ44VCMTHRU-HOLE (Low-ohmic TO-257AA)60V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7YSZ44VCM 60V 0.0195 20A*Low OhmicSeventh Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This b

Datasheet: IRF7910PBF-1 , IRF7946 , IRF7E3704 , IRF7F3704 , IRF7MS2907 , IRF7N1405 , IRF7NA2907 , IRF7NJZ44V , IRF630 , IRF7YSZ44VCM , IRF8010PBF , IRF8010SPBF , IRF8113GPBF , IRF8113PBF , IRF8113PBF-1 , IRF820ASPBF , IRF820B .

History: NX7002BK

Keywords - IRF7Y1405CM MOSFET datasheet

 IRF7Y1405CM cross reference
 IRF7Y1405CM equivalent finder
 IRF7Y1405CM lookup
 IRF7Y1405CM substitution
 IRF7Y1405CM replacement

 

 
Back to Top

 


 
.