IRF7Y1405CM Datasheet. Specs and Replacement

Type Designator: IRF7Y1405CM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0153 Ohm

Package: TO-257AA

IRF7Y1405CM substitution

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IRF7Y1405CM datasheet

 ..1. Size:93K  international rectifier
 irf7y1405cm.pdf pdf_icon

IRF7Y1405CM

PD - 94449 HEXFET POWER MOSFET IRF7Y1405CM THRU-HOLE (TO-257AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7Y1405CM 55V 0.0153 18A* Seventh Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with t... See More ⇒

 9.1. Size:110K  international rectifier
 irf7ysz44vcm.pdf pdf_icon

IRF7Y1405CM

PD - 94603 HEXFET POWER MOSFET IRF7YSZ44VCM THRU-HOLE (Low-ohmic TO-257AA) 60V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF7YSZ44VCM 60V 0.0195 20A* Low Ohmic Seventh Generation HEXFET power MOSFETs from TO-257AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This b... See More ⇒

Detailed specifications: IRF7910PBF-1, IRF7946, IRF7E3704, IRF7F3704, IRF7MS2907, IRF7N1405, IRF7NA2907, IRF7NJZ44V, IRF640N, IRF7YSZ44VCM, IRF8010PBF, IRF8010SPBF, IRF8113GPBF, IRF8113PBF, IRF8113PBF-1, IRF820ASPBF, IRF820B

Keywords - IRF7Y1405CM MOSFET specs

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