All MOSFET. IRF7YSZ44VCM Datasheet

 

IRF7YSZ44VCM Datasheet and Replacement


   Type Designator: IRF7YSZ44VCM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO-257AA
 

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IRF7YSZ44VCM Datasheet (PDF)

 ..1. Size:110K  international rectifier
 irf7ysz44vcm.pdf pdf_icon

IRF7YSZ44VCM

PD - 94603HEXFET POWER MOSFET IRF7YSZ44VCMTHRU-HOLE (Low-ohmic TO-257AA)60V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7YSZ44VCM 60V 0.0195 20A*Low OhmicSeventh Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This b

 9.1. Size:93K  international rectifier
 irf7y1405cm.pdf pdf_icon

IRF7YSZ44VCM

PD - 94449HEXFET POWER MOSFET IRF7Y1405CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7Y1405CM 55V 0.0153 18A*Seventh Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t

Datasheet: IRF7946 , IRF7E3704 , IRF7F3704 , IRF7MS2907 , IRF7N1405 , IRF7NA2907 , IRF7NJZ44V , IRF7Y1405CM , 10N60 , IRF8010PBF , IRF8010SPBF , IRF8113GPBF , IRF8113PBF , IRF8113PBF-1 , IRF820ASPBF , IRF820B , IRF820L .

History: BLP038N10GL-P | STD5NK50ZT4 | PZ5203EMA | 6N60KG-TA3-T | P1060ETFS | NCEP60T15AG | FDU8778

Keywords - IRF7YSZ44VCM MOSFET datasheet

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