All MOSFET. IRF7YSZ44VCM Datasheet

 

IRF7YSZ44VCM MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7YSZ44VCM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO-257AA

 IRF7YSZ44VCM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7YSZ44VCM Datasheet (PDF)

 ..1. Size:110K  international rectifier
 irf7ysz44vcm.pdf

IRF7YSZ44VCM IRF7YSZ44VCM

PD - 94603HEXFET POWER MOSFET IRF7YSZ44VCMTHRU-HOLE (Low-ohmic TO-257AA)60V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7YSZ44VCM 60V 0.0195 20A*Low OhmicSeventh Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This b

 9.1. Size:93K  international rectifier
 irf7y1405cm.pdf

IRF7YSZ44VCM IRF7YSZ44VCM

PD - 94449HEXFET POWER MOSFET IRF7Y1405CMTHRU-HOLE (TO-257AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7Y1405CM 55V 0.0153 18A*Seventh Generation HEXFET power MOSFETs fromTO-257AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOB4S60L

 

 
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